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|Title:||High spin filtering under the influence of in-plane magneto-electric field and spin orbit coupling||Authors:||Tan, S.G.
|Issue Date:||30-Jun-2005||Citation:||Tan, S.G.,Jalil, M.B.A.,Teo, K.L.,Liew, T.,Chong, T.C. (2005-06-30). High spin filtering under the influence of in-plane magneto-electric field and spin orbit coupling. AIP Conference Proceedings 772 : 1381-1382. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1994628||Abstract:||Periodic delta magnetic barriers are applied in the plane of a III-V semiconductor 2DEG across the electron conduction path of a HEMT device. Because of structural inversion asymmetry in the 2DEG, electron spin is coupled to both the crystal field and the in-plane magnetic field, producing highly spin-polarized current in the device. To maximize spin polarization P, an array of repeating zero-gauge type of magneto-electric barriers is used. Our calculation for electron transmission T for 10 repeating barrier units shows resonant-like peaks for different electron spin, resulting in ideal P of 100% over a wide energy range of 0.5-0.9 E F. It was also found that a perpendicular E field can also modulate P in the 2DEG channel. © 2005 American Institute of Physics.||Source Title:||AIP Conference Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83792||ISBN:||0735402574||ISSN:||0094243X||DOI:||10.1063/1.1994628|
|Appears in Collections:||Staff Publications|
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