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https://scholarbank.nus.edu.sg/handle/10635/83788
DC Field | Value | |
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dc.title | High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application | |
dc.contributor.author | Tran, X.A. | |
dc.contributor.author | Gao, B. | |
dc.contributor.author | Kang, J.F. | |
dc.contributor.author | Wu, L. | |
dc.contributor.author | Wang, Z.R. | |
dc.contributor.author | Fang, Z. | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Yeo, Y.C. | |
dc.contributor.author | Du, A.Y. | |
dc.contributor.author | Nguyen, B.Y. | |
dc.contributor.author | Li, M.F. | |
dc.contributor.author | Yu, H.Y. | |
dc.date.accessioned | 2014-10-07T04:45:12Z | |
dc.date.available | 2014-10-07T04:45:12Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Tran, X.A.,Gao, B.,Kang, J.F.,Wu, L.,Wang, Z.R.,Fang, Z.,Pey, K.L.,Yeo, Y.C.,Du, A.Y.,Nguyen, B.Y.,Li, M.F.,Yu, H.Y. (2011). High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application. Digest of Technical Papers - Symposium on VLSI Technology : 44-45. ScholarBank@NUS Repository. | |
dc.identifier.isbn | 9784863481640 | |
dc.identifier.issn | 07431562 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83788 | |
dc.description.abstract | We report a high performance unipolar RRAM with Ni-electrode/HfO x/AlOy/p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of ∼10 5; 2) ∼100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (> 106 cycles); 5) high temperature retention (>105 s @ 120°C), and high temperature operating stability (> 200°C) without threshold resistive switching; 6) a fast set/rest speed of ∼10/30 ns; 7) full CMOS compatible materials and process: with p +-Si bottom electrode, avoiding the use of noble metals, e.g. Pt. © 2011 JSAP (Japan Society of Applied Physi. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Digest of Technical Papers - Symposium on VLSI Technology | |
dc.description.page | 44-45 | |
dc.description.coden | DTPTE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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