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|Title:||High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications||Authors:||Liu, B.
|Issue Date:||2013||Citation:||Liu, B.,Gong, X.,Cheng, R.,Guo, P.,Zhou, Q.,Owen, M.H.S.,Guo, C.,Wang, L.,Wang, W.,Yang, Y.,Yeo, Y.-C.,Wan, C.-T.,Chen, S.-H.,Cheng, C.-C.,Lin, Y.-R.,Wu, C.-H.,Ko, C.-H.,Wann, C.H. (2013). High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications. Technical Digest - International Electron Devices Meeting, IEDM : 26.7.1-26.7.3. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724700||Abstract:||We report the first realization of high performance Ge CMOS using a novel InAlP passivation scheme. The large conduction band and valence band offsets between InAlP and Ge confine electrons and holes within the Ge channel for n-FETs and p-FETs, respectively. The InAlP cap reduces scattering due to high-K/InAlP interface traps and boosts carrier mobility. As a result, a record high electron mobility μηΡΡ of ∼958 cm 2/V-s at Now of 6×1011 cm-2 was achieved for Ge(100) n-FETs, and a high peak hole mobility of ∼390 cm2/V-s was obtained for Ge(100) p-FETs. High on-state currents Ion of 39.5 μA/μm and 31.2 μA/μm were achieved at gate overdrive Vas-Vm = 1 V and Vds = 1 V for the n-FETs and p-FETs, respectively, with a gate length La of ∼3 μm. In addition, for the first time, this novel InAlP passivation technique was integrated into Ge n-FinFETs, and good control of short channel effects (SCEs) was achieved. © 2013 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/83783||ISBN:||9781479923076||ISSN:||01631918||DOI:||10.1109/IEDM.2013.6724700|
|Appears in Collections:||Staff Publications|
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