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Title: High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications
Authors: Liu, B.
Gong, X.
Cheng, R. 
Guo, P.
Zhou, Q. 
Owen, M.H.S.
Guo, C.
Wang, L.
Wang, W.
Yang, Y.
Yeo, Y.-C. 
Wan, C.-T.
Chen, S.-H.
Cheng, C.-C.
Lin, Y.-R.
Wu, C.-H.
Ko, C.-H.
Wann, C.H.
Issue Date: 2013
Citation: Liu, B.,Gong, X.,Cheng, R.,Guo, P.,Zhou, Q.,Owen, M.H.S.,Guo, C.,Wang, L.,Wang, W.,Yang, Y.,Yeo, Y.-C.,Wan, C.-T.,Chen, S.-H.,Cheng, C.-C.,Lin, Y.-R.,Wu, C.-H.,Ko, C.-H.,Wann, C.H. (2013). High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications. Technical Digest - International Electron Devices Meeting, IEDM : 26.7.1-26.7.3. ScholarBank@NUS Repository.
Abstract: We report the first realization of high performance Ge CMOS using a novel InAlP passivation scheme. The large conduction band and valence band offsets between InAlP and Ge confine electrons and holes within the Ge channel for n-FETs and p-FETs, respectively. The InAlP cap reduces scattering due to high-K/InAlP interface traps and boosts carrier mobility. As a result, a record high electron mobility μηΡΡ of ∼958 cm 2/V-s at Now of 6×1011 cm-2 was achieved for Ge(100) n-FETs, and a high peak hole mobility of ∼390 cm2/V-s was obtained for Ge(100) p-FETs. High on-state currents Ion of 39.5 μA/μm and 31.2 μA/μm were achieved at gate overdrive Vas-Vm = 1 V and Vds = 1 V for the n-FETs and p-FETs, respectively, with a gate length La of ∼3 μm. In addition, for the first time, this novel InAlP passivation technique was integrated into Ge n-FinFETs, and good control of short channel effects (SCEs) was achieved. © 2013 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
ISBN: 9781479923076
ISSN: 01631918
DOI: 10.1109/IEDM.2013.6724700
Appears in Collections:Staff Publications

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