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Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0943ecst
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dc.titleHigh hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
dc.contributor.authorHan, G.
dc.contributor.authorSu, S.
dc.contributor.authorYang, Y.
dc.contributor.authorGuo, P.
dc.contributor.authorGong, X.
dc.contributor.authorWang, L.
dc.contributor.authorWang, W.
dc.contributor.authorGuo, C.
dc.contributor.authorZhang, G.
dc.contributor.authorXue, C.
dc.contributor.authorCheng, B.
dc.contributor.authorYeo, Y.C.
dc.date.accessioned2014-10-07T04:45:05Z
dc.date.available2014-10-07T04:45:05Z
dc.date.issued2012
dc.identifier.citationHan, G., Su, S., Yang, Y., Guo, P., Gong, X., Wang, L., Wang, W., Guo, C., Zhang, G., Xue, C., Cheng, B., Yeo, Y.C. (2012). High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate. ECS Transactions 50 (9) : 943-948. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0943ecst
dc.identifier.isbn9781607683575
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83779
dc.description.abstractWe report the demonstration of strained GeSn channel pMOSFETs on (111)- and (100)-oriented Ge substrates. The Sn composition is 4.1%. The device interface is passivated using (NH4)2S solution. Compared to devices on Ge(100), GeSn pMOSFETs on Ge(111) demonstrate a 20% enhancement in effective hole mobility at an inversion charge density (Qinv) of 2 × 10 13 cm-2. © The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/05009.0943ecst
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/05009.0943ecst
dc.description.sourcetitleECS Transactions
dc.description.volume50
dc.description.issue9
dc.description.page943-948
dc.identifier.isiut000338015300112
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