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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83767
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dc.titleGraphene nanoribbon schottky diodes using asymmetric contacts
dc.contributor.authorKargar, A.
dc.contributor.authorLee, C.
dc.date.accessioned2014-10-07T04:44:57Z
dc.date.available2014-10-07T04:44:57Z
dc.date.issued2009
dc.identifier.citationKargar, A.,Lee, C. (2009). Graphene nanoribbon schottky diodes using asymmetric contacts. 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 : 243-245. ScholarBank@NUS Repository.
dc.identifier.isbn9789810836948
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83767
dc.description.abstractThis paper presents Schottky diodes based on graphene nanoribbons (GNRs). We show that double gate GNR field effect transistors (FETs) with a p-type semiconducting GNR and asymmetric Schottky contacts provide a good rectification characteristic. The diode rectification can be tuned through the use of different GNRs with various widths. A rectification ratio of ∼ 2×107 is achieved for an N = 10 GNR at a low gate bias voltage of 0.2 V. © 2009 IEEE NANO Organizers.
dc.sourceScopus
dc.subjectAsymmetric contacts
dc.subjectGraphene nanoribbon
dc.subjectSchottky diode
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitle2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
dc.description.page243-245
dc.identifier.isiutNOT_IN_WOS
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