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|Title:||Graphene nanoribbon schottky diodes using asymmetric contacts||Authors:||Kargar, A.
|Issue Date:||2009||Citation:||Kargar, A.,Lee, C. (2009). Graphene nanoribbon schottky diodes using asymmetric contacts. 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 : 243-245. ScholarBank@NUS Repository.||Abstract:||This paper presents Schottky diodes based on graphene nanoribbons (GNRs). We show that double gate GNR field effect transistors (FETs) with a p-type semiconducting GNR and asymmetric Schottky contacts provide a good rectification characteristic. The diode rectification can be tuned through the use of different GNRs with various widths. A rectification ratio of ∼ 2×107 is achieved for an N = 10 GNR at a low gate bias voltage of 0.2 V. © 2009 IEEE NANO Organizers.||Source Title:||2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009||URI:||http://scholarbank.nus.edu.sg/handle/10635/83767||ISBN:||9789810836948|
|Appears in Collections:||Staff Publications|
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