Please use this identifier to cite or link to this item:
https://doi.org/10.1149/05009.0979ecst
DC Field | Value | |
---|---|---|
dc.title | Germanium tin tunneling field-effect transistor for sub-0.4 v operation | |
dc.contributor.author | Yang, Y. | |
dc.contributor.author | Low, K.L. | |
dc.contributor.author | Guo, P. | |
dc.contributor.author | Wei, W. | |
dc.contributor.author | Han, G. | |
dc.contributor.author | Yeo., Y.-C. | |
dc.date.accessioned | 2014-10-07T04:44:54Z | |
dc.date.available | 2014-10-07T04:44:54Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C. (2012). Germanium tin tunneling field-effect transistor for sub-0.4 v operation. ECS Transactions 50 (9) : 979-986. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0979ecst | |
dc.identifier.isbn | 9781607683575 | |
dc.identifier.issn | 19385862 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83763 | |
dc.description.abstract | Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge 1-xSnx-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage. © The Electrochemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/05009.0979ecst | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1149/05009.0979ecst | |
dc.description.sourcetitle | ECS Transactions | |
dc.description.volume | 50 | |
dc.description.issue | 9 | |
dc.description.page | 979-986 | |
dc.identifier.isiut | 000338015300117 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.