Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.043
DC FieldValue
dc.titleGe diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure
dc.contributor.authorGao, F.
dc.contributor.authorLee, S.J.
dc.contributor.authorBalakumar, S.
dc.contributor.authorDu, A.
dc.contributor.authorFoo, Y.-L.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:44:49Z
dc.date.available2014-10-07T04:44:49Z
dc.date.issued2006-05-10
dc.identifier.citationGao, F., Lee, S.J., Balakumar, S., Du, A., Foo, Y.-L., Kwong, D.-L. (2006-05-10). Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure. Thin Solid Films 504 (1-2) : 69-72. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.043
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83757
dc.description.abstractWe report growth of Si1 - xGex/Si and Ge on insulator by Ge diffusion and SPE (solid phase epitaxy). Different annealing conditions were carried out and evaluated by X-ray diffraction. Ge diffusion and SPE growth of Ge on Si are observed after annealing at 800 °C. EDX (electron dispersive X-ray) composition analysis shows that the top 100 Å Si 1 - xGex layer is quite uniform with Ge content variation of less than 2%. TEM (transmission electron microscopy) picture shows no crystal orientation misalignment between the Si and the top Si1 - xGe x layer. This simple and cost-effective process can be used to make Si1 - xGex /Si substrate for high-mobility metal oxide semiconductor field effect transistor application. In addition, Ge on insulator structure was achieved by SPE lateral growth on pre-patterned SiO2.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.043
dc.sourceScopus
dc.subjectGOI
dc.subjectMOSFET
dc.subjectSiGe
dc.subjectSolid phase epitaxy
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2005.09.043
dc.description.sourcetitleThin Solid Films
dc.description.volume504
dc.description.issue1-2
dc.description.page69-72
dc.description.codenTHSFA
dc.identifier.isiut000236486200017
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

22
checked on Jun 1, 2020

WEB OF SCIENCETM
Citations

21
checked on Jun 1, 2020

Page view(s)

74
checked on May 31, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.