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|Title:||Femtosecond laser-induced crystallization in as-deposited Ge 1Sb 2Te 4 films||Authors:||Wang, Q.F.
|Issue Date:||2003||Citation:||Wang, Q.F.,Shi, L.P.,Huang, S.M.,Miao, X.S.,Wong, K.P.,Chong, T.C. (2003). Femtosecond laser-induced crystallization in as-deposited Ge 1Sb 2Te 4 films. Materials Research Society Symposium - Proceedings 803 : 239-244. ScholarBank@NUS Repository.||Abstract:||Time resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge 1Sb 2Te 4 films. With an average fluence of 24mJ/cm 2, a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83738||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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