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|Title:||Fast high-κ AIN MONOS memory with large memory window and good retention||Authors:||Lai, C.H.
|Issue Date:||2005||Citation:||Lai, C.H.,Huang, C.C.,Chiang, K.C.,Kao, H.L.,Chen, W.J.,Chin, A.,Chi, C.C. (2005). Fast high-κ AIN MONOS memory with large memory window and good retention. Device Research Conference - Conference Digest, DRC 2005 : 99-100. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2005.1553074||Abstract:||We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO2-HfAlO-AIN-SiO2-Si MONOS device. © 2005 IEEE.||Source Title:||Device Research Conference - Conference Digest, DRC||URI:||http://scholarbank.nus.edu.sg/handle/10635/83732||ISBN:||0780390407||ISSN:||15483770||DOI:||10.1109/DRC.2005.1553074|
|Appears in Collections:||Staff Publications|
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