Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83729
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dc.titleFactors affecting Ge nanocrystal size in co-sputtered Ge+SiO2 films
dc.contributor.authorChoi, W.K.
dc.contributor.authorNg, V.
dc.contributor.authorHo, Y.W.
dc.contributor.authorChen, T.B.
dc.contributor.authorHo, V.
dc.date.accessioned2014-10-07T04:44:30Z
dc.date.available2014-10-07T04:44:30Z
dc.date.issued2001
dc.identifier.citationChoi, W.K.,Ng, V.,Ho, Y.W.,Chen, T.B.,Ho, V. (2001). Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2 films. Materials Research Society Symposium - Proceedings 638 : F1411-F1416. ScholarBank@NUS Repository.
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83729
dc.description.abstractThe high resolution transmission electron microscopy and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal processing (RTA) have been presented. From the results of samples with different Ge concentrations, it was concluded that there is a narrow window in the Ge concentration that can produce nanocrystals. We also showed that it is possible to vary RTA duration or temperature to produce Ge nanocrystals with varying sizes. Our results therefore suggest that it is possible to utilize (i) annealing duration and; (ii) temperature to tune crystal sizes for optoelectronic applications.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium - Proceedings
dc.description.volume638
dc.description.pageF1411-F1416
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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