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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83727
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dc.titleFabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
dc.contributor.authorWang, G.H.
dc.contributor.authorToh, E.-H.
dc.contributor.authorTung, C.-H.
dc.contributor.authorFoo, Y.-L.
dc.contributor.authorTripathy, S.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:44:29Z
dc.date.available2014-10-07T04:44:29Z
dc.date.issued2007
dc.identifier.citationWang, G.H.,Toh, E.-H.,Tung, C.-H.,Foo, Y.-L.,Tripathy, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2007). Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing. Materials Research Society Symposium Proceedings 994 : 245-250. ScholarBank@NUS Repository.
dc.identifier.isbn9781558999541
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83727
dc.description.abstractA novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported. A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content. A systematic study of the stress developed in the SiGe layer as condensation takes place is presented. A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs. © 2007 Materials Research Society.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium Proceedings
dc.description.volume994
dc.description.page245-250
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

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