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dc.titleEpitaxial growth of single crystalline Ge films on GaAs substrates for CMOS device integration
dc.contributor.authorChin, H.-C.
dc.contributor.authorZhu, M.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.identifier.citationChin, H.-C.,Zhu, M.,Samudra, G.,Yeo, Y.-C. (2008). Epitaxial growth of single crystalline Ge films on GaAs substrates for CMOS device integration. Materials Research Society Symposium Proceedings 1068 : 247-252. ScholarBank@NUS Repository.
dc.description.abstractWe report a novel chemical vapor deposition (CVD) process for epitaxial growth of Ge film on GaAs substrate. The resultant layer exhibits device level quality, as shown by highresolution transmission electron microscopy (HRTEM), Raman spectroscopy, high-resolution X-ray diffraction (HRXRD). In addition, atomic force microscopy (AFM) scanning indicates low RMS surface roughness of 5 Å. Secondary ion mass spectrometry (SIMS) reveals negligible out-diffusion of Ga and As into the Ge epilayer. By employing silane passivation, Ge pMOSFET with TaN/HfO2 gate stack was fabricated on Ge/GaAs heterostructure for the first time, showing excellent output and pinch-off characteristics. A GaAs channel n-MOSFET was also fabricated, using similar SiH4 treatment during gate stack formation. These results reveal a potential solution to integrate Ge p-channel and GaAs n-channel MOSFET for advanced CMOS applications. © 2008 Materials Research Society.
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium Proceedings
Appears in Collections:Staff Publications

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