Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ISDRS.2007.4422277
DC Field | Value | |
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dc.title | Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS) | |
dc.contributor.author | Ang, K.-W. | |
dc.contributor.author | Wong, H.-S. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Samudra, G. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:44:12Z | |
dc.date.available | 2014-10-07T04:44:12Z | |
dc.date.issued | 2007 | |
dc.identifier.citation | Ang, K.-W.,Wong, H.-S.,Balasubramanian, N.,Samudra, G.,Yeo, Y.-C. (2007). Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS). 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2007.4422277" target="_blank">https://doi.org/10.1109/ISDRS.2007.4422277</a> | |
dc.identifier.isbn | 1424418917 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83701 | |
dc.description.abstract | We report on further performance optimization in a novel n-channel transistor (n-FET) with beneath-the-channel strain-transfer structure (STS) and embedded silicon-carbon source/drain (Si:C S/D) stressors. The incorporation of SiGe STS couples additional strain from the S/D stressors to the overlying Si channel, leading to enhanced strain effects in the channel region. In addition, a two-step recess-etch was used to bring the double-recessed S/D stressors in closer proximity, increasing their lattice interactions with the channel and the STS, thereby significantly increasing the saturation drive current I on enhancement over control devices. ©2007 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ISDRS.2007.4422277 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/ISDRS.2007.4422277 | |
dc.description.sourcetitle | 2007 International Semiconductor Device Research Symposium, ISDRS | |
dc.description.page | - | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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