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|Title:||Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)||Authors:||Subramanian, S.
|Issue Date:||2012||Citation:||Subramanian, S.,Ivana,Yeo, Y.-C. (2012). Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET). International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210150||Abstract:||We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current I OFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance R sh of ∼20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance R sd, as compared with a conventional UTB-FET with thin S/D. © 2012 IEEE.||Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83692||ISBN:||9781457720840||ISSN:||19308868||DOI:||10.1109/VLSI-TSA.2012.6210150|
|Appears in Collections:||Staff Publications|
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