Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0519ecst
DC FieldValue
dc.titleElectronic band structure and effective masses of Ge1-xSn x alloys
dc.contributor.authorLow, K.L.
dc.contributor.authorYang, Y.
dc.contributor.authorHan, G.
dc.contributor.authorFan, W.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:44:04Z
dc.date.available2014-10-07T04:44:04Z
dc.date.issued2012
dc.identifier.citationLow, K.L., Yang, Y., Han, G., Fan, W., Yeo, Y.-C. (2012). Electronic band structure and effective masses of Ge1-xSn x alloys. ECS Transactions 50 (9) : 519-526. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0519ecst
dc.identifier.isbn9781607683575
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83690
dc.description.abstractThe electronic band structures of Ge1-xSnx alloys for Sn composition varying from 0 to 20% were investigated using the Empirical Pseudopotential Method (EPM). By tuning the adjustable form factors of EPM, the band features which agree well with the reported experimental data were successfully reproduced. From the calculated band structures of Ge 1-xSnx alloys along high symmetrical lines in the Brillouin Zone, the effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were derived by fitting the effective mass at different Sn compositions by a quadratic polynomial. © The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/05009.0519ecst
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/05009.0519ecst
dc.description.sourcetitleECS Transactions
dc.description.volume50
dc.description.issue9
dc.description.page519-526
dc.identifier.isiut000338015300061
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