Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2008.2003043
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dc.titleEfficient spin injection and spin filtering in semiconductors by utilizing the k3-Dresselhaus spin-orbit effect
dc.contributor.authorFujita, T.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-10-07T04:44:02Z
dc.date.available2014-10-07T04:44:02Z
dc.date.issued2008-11
dc.identifier.citationFujita, T., Jalil, M.B.A., Tan, S.G. (2008-11). Efficient spin injection and spin filtering in semiconductors by utilizing the k3-Dresselhaus spin-orbit effect. IEEE Transactions on Magnetics 44 (11 PART 2) : 2643-2646. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2008.2003043
dc.identifier.issn00189464
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83687
dc.description.abstractWe numerically study the spin-dependent transmission characteristic of conduction electrons across a semiconductor-based trilayer structure with k 3-Dresselhaus spin-orbit coupling, where the Fermi level of electrons exceeds the electrostatic barrier height. Unlike previous studies which focus on the tunneling regime, the electron transmission across our structure is high, thereby ensuring that the polarization can be utilized in a practical device. The polarization is studied for two barrier materials, GaSb and InSb, which both show a considerable polarization amplitude attainable within realistic modeling values. We finally propose two interesting spintronic device concepts based on our structure and its unique polarization characteristics; a sensitive, gate-tunable spin filter and a novel spin transistor device. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMAG.2008.2003043
dc.sourceScopus
dc.subjectSemiconductor spintronics
dc.subjectSpin injection
dc.subjectSpin-based transistors
dc.subjectSpin-orbit coupling
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TMAG.2008.2003043
dc.description.sourcetitleIEEE Transactions on Magnetics
dc.description.volume44
dc.description.issue11 PART 2
dc.description.page2643-2646
dc.description.codenIEMGA
dc.identifier.isiut000262221200049
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