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|Title:||Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices||Authors:||Qin, L.
|Issue Date:||22-Jan-2003||Citation:||Qin, L., Shen, Z.X., Teo, K.L., Peng, C.S., Zhou, J.M., Tung, C.H., Tang, S.H. (2003-01-22). Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices. Thin Solid Films 424 (1) : 23-27. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(02)00900-8||Abstract:||Self-organized Ge/Si quantum dots (QD's) in strained Si/Ge short-period superlattices are studied by Raman scattering under hydrostatic pressure excited in-resonance and off-resonance with the confined Ge-like E1 transition of Ge using 488 and 514.5 nm lines from an argon-ion laser and 632.8 nm line from a He-Ne laser. The Raman spectra of Ge-Ge, Si-Ge and Si-2TA modes of the QD's were obtained as a function of pressure in the range of 1-70 kbar. Our results show that the mode Grüneisen parameter of the Ge-Ge phonon mode in QD's is found to be γ = 0.81 ± 0.01, which is smaller than that of the bulk Ge. We observe resonance effects with the confined Ge-like E1 transition and the pressure coefficient of this resonating electronic transition obtained is ∼5 ± 1 meV kbar-1. © 2002 Elsevier Science B.V. All rights reserved.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/83678||ISSN:||00406090||DOI:||10.1016/S0040-6090(02)00900-8|
|Appears in Collections:||Staff Publications|
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