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dc.titleEffects of Cu interdiffusion on the electromigration failure of FM/Cu/FM tri-layers for spin valve read sensors
dc.contributor.authorJiang, J.
dc.contributor.authorBae, S.
dc.contributor.authorKim, S.
dc.identifier.citationJiang, J., Bae, S., Kim, S. (2007-06). Effects of Cu interdiffusion on the electromigration failure of FM/Cu/FM tri-layers for spin valve read sensors. IEEE Transactions on Magnetics 43 (6) : 2836-2838. ScholarBank@NUS Repository.
dc.description.abstractElectromigration-induced failure (EIF) lifetime characteristics of FM/Cu/FM (FM: NiFe or Co) tri-layers, which are currently used in GMR spin-valve read sensors, have been investigated to verify the fundamental failure mechanisms. It is found that the lifetime of NiFe/Cu/NiFe tri-layers was dramatically increased by decreasing the Cu spacer thickness. The obvious shorter lifetime of NiFe/Cu/NiFe tri-layers compared to that of Co/Cu/Co tri-layers was mainly thought to be attributed to the formation of current paths resulted from the electromigration-induced Cu interdiffusion into the top or bottom NiFe layer during electrical stressing caused by the Ni-Cu intermixing. The activation energy (Ea) and current density factor, "n" value of the NiFe/Cu/NiFe tri-layers were found to be 0.23-0.25 eV and 1.23-1.32, respectively. It is suggested that the control of Cu spacer interdiffusion and chemical roughness at the FM/Cu interface is crucial in determining the electrical reliability of FM/Cu/FM based GMR spin valve read sensors. © 2007 IEEE.
dc.subjectCu spacer microstructure
dc.subjectFM/Cu spacer interface
dc.subjectFM/Cu/FM tri-layers
dc.subjectInterdiffusion of Cu spacer
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleIEEE Transactions on Magnetics
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