Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2007.893118
Title: Effects of Cu interdiffusion on the electromigration failure of FM/Cu/FM tri-layers for spin valve read sensors
Authors: Jiang, J.
Bae, S. 
Kim, S. 
Keywords: Cu spacer microstructure
Electromigration
FM/Cu spacer interface
FM/Cu/FM tri-layers
Interdiffusion of Cu spacer
Issue Date: Jun-2007
Citation: Jiang, J., Bae, S., Kim, S. (2007-06). Effects of Cu interdiffusion on the electromigration failure of FM/Cu/FM tri-layers for spin valve read sensors. IEEE Transactions on Magnetics 43 (6) : 2836-2838. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2007.893118
Abstract: Electromigration-induced failure (EIF) lifetime characteristics of FM/Cu/FM (FM: NiFe or Co) tri-layers, which are currently used in GMR spin-valve read sensors, have been investigated to verify the fundamental failure mechanisms. It is found that the lifetime of NiFe/Cu/NiFe tri-layers was dramatically increased by decreasing the Cu spacer thickness. The obvious shorter lifetime of NiFe/Cu/NiFe tri-layers compared to that of Co/Cu/Co tri-layers was mainly thought to be attributed to the formation of current paths resulted from the electromigration-induced Cu interdiffusion into the top or bottom NiFe layer during electrical stressing caused by the Ni-Cu intermixing. The activation energy (Ea) and current density factor, "n" value of the NiFe/Cu/NiFe tri-layers were found to be 0.23-0.25 eV and 1.23-1.32, respectively. It is suggested that the control of Cu spacer interdiffusion and chemical roughness at the FM/Cu interface is crucial in determining the electrical reliability of FM/Cu/FM based GMR spin valve read sensors. © 2007 IEEE.
Source Title: IEEE Transactions on Magnetics
URI: http://scholarbank.nus.edu.sg/handle/10635/83677
ISSN: 00189464
DOI: 10.1109/TMAG.2007.893118
Appears in Collections:Staff Publications

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