Please use this identifier to cite or link to this item: https://doi.org/10.1109/IRPS.2010.5488674
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dc.titleEffect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
dc.contributor.authorLiu, B.
dc.contributor.authorLim, P.S.Y.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:43:53Z
dc.date.available2014-10-07T04:43:53Z
dc.date.issued2010
dc.identifier.citationLiu, B., Lim, P.S.Y., Yeo, Y.-C. (2010). Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric. IEEE International Reliability Physics Symposium Proceedings : 1055-1057. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2010.5488674
dc.identifier.isbn9781424454310
dc.identifier.issn15417026
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83674
dc.description.abstractWe report the first investigation of the effect of strain on NBTI of Germanium (Ge) p-channel Field Effect Transistors (p-FETs) with high-κ; gate dielectric. In this study, a mechanical wafer bending tool was used to alter strain in the Ge channel. It is found that higher longitudinal tensile strain in the channel of Ge p-FETs leads to worse NBTI performance. By reducing the tensile strain in the longitudinal direction by wafer bending, improvement in drive current and reduction of NBTI degradation are achieved. Gate width WG dependence of NBTI in Ge p-MOSFET is also reported. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IRPS.2010.5488674
dc.sourceScopus
dc.subjectGe
dc.subjectHigh-κ
dc.subjectNBTI
dc.subjectP-FET
dc.subjectStrain
dc.subjectWafer bending
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IRPS.2010.5488674
dc.description.sourcetitleIEEE International Reliability Physics Symposium Proceedings
dc.description.page1055-1057
dc.identifier.isiut000287515600186
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