Please use this identifier to cite or link to this item:
|Title:||Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric||Authors:||Liu, B.
|Issue Date:||2010||Citation:||Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2010). Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric. IEEE International Reliability Physics Symposium Proceedings : 1055-1057. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2010.5488674||Abstract:||We report the first investigation of the effect of strain on NBTI of Germanium (Ge) p-channel Field Effect Transistors (p-FETs) with high-κ; gate dielectric. In this study, a mechanical wafer bending tool was used to alter strain in the Ge channel. It is found that higher longitudinal tensile strain in the channel of Ge p-FETs leads to worse NBTI performance. By reducing the tensile strain in the longitudinal direction by wafer bending, improvement in drive current and reduction of NBTI degradation are achieved. Gate width WG dependence of NBTI in Ge p-MOSFET is also reported. © 2010 IEEE.||Source Title:||IEEE International Reliability Physics Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83674||ISBN:||9781424454310||ISSN:||15417026||DOI:||10.1109/IRPS.2010.5488674|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 4, 2020
WEB OF SCIENCETM
checked on Mar 18, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.