Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2005.12.045
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dc.titleEffect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy
dc.contributor.authorLiu, H.F.
dc.contributor.authorXiang, N.
dc.contributor.authorChua, S.J.
dc.contributor.authorTripathy, S.
dc.date.accessioned2014-10-07T04:43:52Z
dc.date.available2014-10-07T04:43:52Z
dc.date.issued2006-02-02
dc.identifier.citationLiu, H.F., Xiang, N., Chua, S.J., Tripathy, S. (2006-02-02). Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy. Journal of Crystal Growth 288 (1) : 44-48. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.045
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83673
dc.description.abstractHigh-resolution X-ray diffraction (HRXRD) and micro-Raman scattering probe have been used to study the effect of post-growth thermal annealing on GaNAs thin films grown on (0 0 1) GaAs substrates by solid-source molecular beam epitaxy assisted with a nitrogen radio-frequency plasma source. X-ray reciprocal space mapping shows slightly in-plane strain relaxation after annealing, however, the vertical lattice constant measured by HRXRD from the (0 0 4) atoms planes shows a shrinkage, which is contrary to both the relaxation of tensile strain and the decreasing of nitrogen due to out-diffusion. The ratio of Raman intensity between the nitrogen-localized vibration mode and the GaAs-like LO is found to increase as a function of annealing temperature, which provides evidence for the increase of substitutional NAs atoms at elevated temperatures. The anneal-induced vertical lattice shrinkage can be explained in term of the redistribution of nitrogen bonding configurations among the substitutional NAs, interstitial N-N, and the N-As complex. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2005.12.045
dc.sourceScopus
dc.subjectA1. Annealing
dc.subjectA3. MBE
dc.subjectB1. GaNAs
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jcrysgro.2005.12.045
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume288
dc.description.issue1
dc.description.page44-48
dc.description.codenJCRGA
dc.identifier.isiut000235581800011
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