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dc.titleEffect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy
dc.contributor.authorLiu, H.F.
dc.contributor.authorXiang, N.
dc.contributor.authorChua, S.J.
dc.contributor.authorTripathy, S.
dc.identifier.citationLiu, H.F., Xiang, N., Chua, S.J., Tripathy, S. (2006-02-02). Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy. Journal of Crystal Growth 288 (1) : 44-48. ScholarBank@NUS Repository.
dc.description.abstractHigh-resolution X-ray diffraction (HRXRD) and micro-Raman scattering probe have been used to study the effect of post-growth thermal annealing on GaNAs thin films grown on (0 0 1) GaAs substrates by solid-source molecular beam epitaxy assisted with a nitrogen radio-frequency plasma source. X-ray reciprocal space mapping shows slightly in-plane strain relaxation after annealing, however, the vertical lattice constant measured by HRXRD from the (0 0 4) atoms planes shows a shrinkage, which is contrary to both the relaxation of tensile strain and the decreasing of nitrogen due to out-diffusion. The ratio of Raman intensity between the nitrogen-localized vibration mode and the GaAs-like LO is found to increase as a function of annealing temperature, which provides evidence for the increase of substitutional NAs atoms at elevated temperatures. The anneal-induced vertical lattice shrinkage can be explained in term of the redistribution of nitrogen bonding configurations among the substitutional NAs, interstitial N-N, and the N-As complex. © 2005 Elsevier B.V. All rights reserved.
dc.subjectA1. Annealing
dc.subjectA3. MBE
dc.subjectB1. GaNAs
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJournal of Crystal Growth
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