Please use this identifier to cite or link to this item: https://doi.org/10.1109/NUSOD.2006.306713
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dc.titleEffect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
dc.contributor.authorDixit, V.
dc.contributor.authorLiu, H.F.
dc.contributor.authorXiang, N.
dc.date.accessioned2014-10-07T04:43:49Z
dc.date.available2014-10-07T04:43:49Z
dc.date.issued2006
dc.identifier.citationDixit, V., Liu, H.F., Xiang, N. (2006). Effect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths. 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 : 5-6. ScholarBank@NUS Repository. https://doi.org/10.1109/NUSOD.2006.306713
dc.identifier.isbn078039755X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83668
dc.description.abstractThe In-segregation in 7.5-nm Ga1-x′In x′Ny′As1-y′/GaAs single quantum well (QW) is studied theoretically. The nominal (In, N) contents in the QW are chosen to be (0.35, 0.015) and (0.39,0.03) for the emission wavelengths at 1.3 and 1.55 μm, respectively. Muraki's model is used to model the composition profiles in the QWs. In-plane strain, confinement potential, and sub band energy levels of the QW are calculated using multi-band effective mass theory. Our results show that the optical transition energies are approximately constant for the segregation efficiencies smaller than 0.7 in both QWs. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/NUSOD.2006.306713
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/NUSOD.2006.306713
dc.description.sourcetitle2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
dc.description.page5-6
dc.identifier.isiut000242581000003
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