Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.43.5006
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dc.titleDynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films
dc.contributor.authorWang, Q.F.
dc.contributor.authorShi, L.P.
dc.contributor.authorHuang, S.M.
dc.contributor.authorMiao, X.S.
dc.contributor.authorWong, K.P.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:43:45Z
dc.date.available2014-10-07T04:43:45Z
dc.date.issued2004-07
dc.identifier.citationWang, Q.F., Shi, L.P., Huang, S.M., Miao, X.S., Wong, K.P., Chong, T.C. (2004-07). Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (7 B) : 5006-5008. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.5006
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83662
dc.description.abstractFemtosecond laser-induced ultrafast crystallization in 80 nm as-deposited Ge 2Sb 2Te 5 films has been investigated by time-resolved microscopy. With an average fluence of approximately 10 mJ/cm 2, a transient nonequilibrinm state of the excited material was formed within 2 ps. The results can be interpreted as an electronically induced nonthermal phase transition.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.43.5006
dc.sourceScopus
dc.subjectFemtosecond laser pulse
dc.subjectGe 2Sb 2Te 2 films
dc.subjectNonthermal phase change
dc.subjectReflective intensity
dc.subjectUltrafast crystallization
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.43.5006
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume43
dc.description.issue7 B
dc.description.page5006-5008
dc.description.codenJAPND
dc.identifier.isiut000223477600128
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