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|Title:||Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films||Authors:||Wang, Q.F.
|Keywords:||Femtosecond laser pulse
Ge 2Sb 2Te 2 films
Nonthermal phase change
|Issue Date:||Jul-2004||Citation:||Wang, Q.F., Shi, L.P., Huang, S.M., Miao, X.S., Wong, K.P., Chong, T.C. (2004-07). Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (7 B) : 5006-5008. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.5006||Abstract:||Femtosecond laser-induced ultrafast crystallization in 80 nm as-deposited Ge 2Sb 2Te 5 films has been investigated by time-resolved microscopy. With an average fluence of approximately 10 mJ/cm 2, a transient nonequilibrinm state of the excited material was formed within 2 ps. The results can be interpreted as an electronically induced nonthermal phase transition.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/83662||ISSN:||00214922||DOI:||10.1143/JJAP.43.5006|
|Appears in Collections:||Staff Publications|
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