Please use this identifier to cite or link to this item:
|Title:||Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films||Authors:||Wang, Q.F.
|Keywords:||Femtosecond laser pulse
Ge 2Sb 2Te 2 films
Nonthermal phase change
|Issue Date:||Jul-2004||Citation:||Wang, Q.F., Shi, L.P., Huang, S.M., Miao, X.S., Wong, K.P., Chong, T.C. (2004-07). Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (7 B) : 5006-5008. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.5006||Abstract:||Femtosecond laser-induced ultrafast crystallization in 80 nm as-deposited Ge 2Sb 2Te 5 films has been investigated by time-resolved microscopy. With an average fluence of approximately 10 mJ/cm 2, a transient nonequilibrinm state of the excited material was formed within 2 ps. The results can be interpreted as an electronically induced nonthermal phase transition.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/83662||ISSN:||00214922||DOI:||10.1143/JJAP.43.5006|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 7, 2021
WEB OF SCIENCETM
checked on Feb 26, 2021
checked on Mar 1, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.