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https://doi.org/10.1143/JJAP.43.5006
| Title: | Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films | Authors: | Wang, Q.F. Shi, L.P. Huang, S.M. Miao, X.S. Wong, K.P. Chong, T.C. |
Keywords: | Femtosecond laser pulse Ge 2Sb 2Te 2 films Nonthermal phase change Reflective intensity Ultrafast crystallization |
Issue Date: | Jul-2004 | Citation: | Wang, Q.F., Shi, L.P., Huang, S.M., Miao, X.S., Wong, K.P., Chong, T.C. (2004-07). Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (7 B) : 5006-5008. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.5006 | Abstract: | Femtosecond laser-induced ultrafast crystallization in 80 nm as-deposited Ge 2Sb 2Te 5 films has been investigated by time-resolved microscopy. With an average fluence of approximately 10 mJ/cm 2, a transient nonequilibrinm state of the excited material was formed within 2 ps. The results can be interpreted as an electronically induced nonthermal phase transition. | Source Title: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | URI: | http://scholarbank.nus.edu.sg/handle/10635/83662 | ISSN: | 00214922 | DOI: | 10.1143/JJAP.43.5006 |
| Appears in Collections: | Staff Publications |
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