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|Title:||Dry etching of LiNbO3 using inductively coupled Plasma||Authors:||Deng, J.
|Issue Date:||2010||Citation:||Deng, J.,Si, G.,Danner, A.J. (2010). Dry etching of LiNbO3 using inductively coupled Plasma. 2010 Photonics Global Conference, PGC 2010 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/PGC.2010.5706006||Abstract:||In this letter, we report ridge waveguides fabricated on X-cut proton exchange (PE)-LiNbO3 using inductively coupled plasma (ICP) etching techniques. Various etching masks and fluorine gases are investigated. Smooth etched surfaces are obtained by using Cr as a mask combined with SF 6/Ar etching gases. A high etch rate of 97.5 nm/min is achieved by using CHF3/Ar gases. Ridge waveguides with approximately 600nm depth, smooth surfaces and nearly vertical sidewalls are successfully fabricated using optimized etching conditions.||Source Title:||2010 Photonics Global Conference, PGC 2010||URI:||http://scholarbank.nus.edu.sg/handle/10635/83650||ISBN:||9781424498826||DOI:||10.1109/PGC.2010.5706006|
|Appears in Collections:||Staff Publications|
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