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|dc.title||DLTS characterisation of InGaAlP films grown using different V/III ratios|
|dc.identifier.citation||Lim, H.F., Chi, D.Z., Dong, J.R., Soh, C.B., Chua, S.J. (2001-12). DLTS characterisation of InGaAlP films grown using different V/III ratios. Materials Science in Semiconductor Processing 4 (6) : 625-629. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00031-8|
|dc.description.abstract||Deep levels in InGaAlP films grown using two different V/III ratios have been studied by employing deep level transient spectroscopy (DLTS). The two samples investigated have the same composition of (Al0.3Ga0.7)0.51In0.49P and a film thickness of 0.6 μm, but grown with V/III ratios 75 and 50. Two defect levels with activation energies 0.23 and 0.78 eV are detected by temperature-scan DLTS in the sample with a V/III ratio of 75, with the 0.78 eV level being the dominant peak. Their respective capture cross-sections are 1.2 × 10-16 and 3.8 × 10-13 cm-2. The 0.78 eV trap level is also analysed using isothermal DLTS measurement and similar values of thermal signatures are obtained. The DLTS spectrum of the 0.78 eV trap level has been found to be broader than that expected for a point-type defect, implying that it may be associated with a complex or extended defect. The observation of logarithmic capture mechanism further supports this speculation. On the other hand, no peak corresponding to the 0.23 eV level appears in isothermal DLTS spectra, which is possibly due to the severe temperature dependence of capture rate and the system's limitation in the high-frequency regime. For the sample with a V/III ratio of 50, only one dominant electron trap level, with an activation energy of 0.42 eV and a capture cross-section of 1.4 × 10-17cm-2, is detected by isothermal DLTS method. © 2002 Elsevier Science Ltd. All rights reserved.|
|dc.contributor.department||ELECTRICAL & COMPUTER ENGINEERING|
|dc.description.sourcetitle||Materials Science in Semiconductor Processing|
|Appears in Collections:||Staff Publications|
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