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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83608
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dc.titleDesign and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm
dc.contributor.authorLin, F.
dc.contributor.authorXiang, N.
dc.contributor.authorWang, X.C.
dc.contributor.authorArokiaraj, J.
dc.contributor.authorLiu, W.
dc.contributor.authorLiu, H.F.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:43:08Z
dc.date.available2014-10-07T04:43:08Z
dc.date.issued2006
dc.identifier.citationLin, F.,Xiang, N.,Wang, X.C.,Arokiaraj, J.,Liu, W.,Liu, H.F.,Chua, S.J. (2006). Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm. Materials Research Society Symposium Proceedings 955 : 348-353. ScholarBank@NUS Repository.
dc.identifier.isbn9781604234114
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83608
dc.description.abstractA broadband GaN-based semiconductor saturable absorber mirror (SESAM) with a dielectric SiO2/Si3N4 distributed Bragg reflector (DBR) operating at wavelength around 415 nm was fabricated. Serious oscillation fringes due to the light interference were observed in the SESAM's reflectance spectrum. Such oscillation in reflectivity can impede the function of the saturable absorber. Simulations showed that by removing the sapphire substrate and thinning the GaN buffer layer, oscillation fringes could be significantly reduced. Experiments were carried out and the results agreed well with the simulation prediction. © 2007 Materials Research Society.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium Proceedings
dc.description.volume955
dc.description.page348-353
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
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