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Title: Crystallization-induced stress in phase change random access memory
Authors: Li, M.H.
Li, J.M.
Shi, L.P.
Yang, H.X.
Chong, T.C. 
Li, Y. 
Issue Date: 2008
Citation: Li, M.H.,Li, J.M.,Shi, L.P.,Yang, H.X.,Chong, T.C.,Li, Y. (2008). Crystallization-induced stress in phase change random access memory. Materials Research Society Symposium Proceedings 1137 : 113-118. ScholarBank@NUS Repository.
Abstract: Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge 2Sb 2Te 5 (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films. © 2009 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
ISBN: 9781615673865
ISSN: 02729172
Appears in Collections:Staff Publications

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