Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83586
Title: Controlled lateral growth of ZnO nanowires using a growth barrier
Authors: Law, J.B.K.
Thong, J.T.L. 
Keywords: Growth barrier
Nanotechnology
ZnO nanowires
Issue Date: 2006
Citation: Law, J.B.K.,Thong, J.T.L. (2006). Controlled lateral growth of ZnO nanowires using a growth barrier. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 2 : 632-635. ScholarBank@NUS Repository.
Abstract: We recently reported a technique to grow ZnO nanowires at predefined locations on a planar substrate. In this work, we report an improvement of this technique using a growth barrier to achieve better controlled lateral growth of ZnO nanowires. We evaluated two types of growth barrier, SiO2 and Spin-On-Glass (SOG) dielectric, and show that both are effective in confining the growth of ZnO nanowires to a lateral direction. The simple fabrication processes and its compatibility with Si-based fabrication technology make this a viable processing technique for controlled growth of ZnO nanowires laterally across a planar substrate for future integrated nanocircuits. © 2006 IEEE.
Source Title: 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
URI: http://scholarbank.nus.edu.sg/handle/10635/83586
ISBN: 1424400783
Appears in Collections:Staff Publications

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