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|Title:||Controlled lateral growth of ZnO nanowires using a growth barrier||Authors:||Law, J.B.K.
|Issue Date:||2006||Citation:||Law, J.B.K.,Thong, J.T.L. (2006). Controlled lateral growth of ZnO nanowires using a growth barrier. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 2 : 632-635. ScholarBank@NUS Repository.||Abstract:||We recently reported a technique to grow ZnO nanowires at predefined locations on a planar substrate. In this work, we report an improvement of this technique using a growth barrier to achieve better controlled lateral growth of ZnO nanowires. We evaluated two types of growth barrier, SiO2 and Spin-On-Glass (SOG) dielectric, and show that both are effective in confining the growth of ZnO nanowires to a lateral direction. The simple fabrication processes and its compatibility with Si-based fabrication technology make this a viable processing technique for controlled growth of ZnO nanowires laterally across a planar substrate for future integrated nanocircuits. © 2006 IEEE.||Source Title:||2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006||URI:||http://scholarbank.nus.edu.sg/handle/10635/83586||ISBN:||1424400783|
|Appears in Collections:||Staff Publications|
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