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|Title:||Continuous Wave Terahertz Photomixer from low temperature grown GaAs with high carrier mobility||Authors:||Tanoto, H.
|Issue Date:||2010||Citation:||Tanoto, H.,Wu, Q.Y.,Teng, J.H.,Sun, M.,Chen, Z.N.,Htoo, T.,Chua, S.J.,Lampin, J.F.,Gokarna, A.,Dogheche, E. (2010). Continuous Wave Terahertz Photomixer from low temperature grown GaAs with high carrier mobility. IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ICIMW.2010.5612417||Abstract:||Low temperature GaAs grown by an MBE system exhibiting Hall carrier mobility of 5000 cm2/v.s. is fabricated into continuous-wave (CW) Terahertz (THz) photomixers utilizing a dual-dipole antenna with an interdigitated feed structure. The characteristics of the CW THz photomixer are presented. © 2010 IEEE.||Source Title:||IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide||URI:||http://scholarbank.nus.edu.sg/handle/10635/83584||ISBN:||9781424466573||DOI:||10.1109/ICIMW.2010.5612417|
|Appears in Collections:||Staff Publications|
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