Please use this identifier to cite or link to this item: https://doi.org/10.1049/ip-map:20040128
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dc.titleConsistent and reliable MESFET parasitic capacitance extraction method
dc.contributor.authorOoi, B.L.
dc.contributor.authorMa, J.Y.
dc.date.accessioned2014-10-07T04:42:47Z
dc.date.available2014-10-07T04:42:47Z
dc.date.issued2004-02
dc.identifier.citationOoi, B.L., Ma, J.Y. (2004-02). Consistent and reliable MESFET parasitic capacitance extraction method. IEE Proceedings: Microwaves, Antennas and Propagation 151 (1) : 81-84. ScholarBank@NUS Repository. https://doi.org/10.1049/ip-map:20040128
dc.identifier.issn13502417
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83577
dc.description.abstractAn improved model is proposed to evaluate the parasitic capacitances of GaAs MESFET transistors from the cold-FET S-parameter. Inherent in most conventional parasitic de-embedding methods, the extraction result for C pd varies drastically with V gs under cold-FET measurement, and this is in great contradiction with the normally adopted bias-independent C pd assumption in active device modelling. An improved model is proposed to tackle this problem. Model parameters can thus be uniquely determined by using only two sets of cold-FET S-parameters under different V gs biasing conditions. The resulting capacitance value, C pd, is found to be independent of V gs when V gs< V p.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1049/ip-map:20040128
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1049/ip-map:20040128
dc.description.sourcetitleIEE Proceedings: Microwaves, Antennas and Propagation
dc.description.volume151
dc.description.issue1
dc.description.page81-84
dc.description.codenIMIPE
dc.identifier.isiut000220568600014
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