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|Title:||Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs||Authors:||Ivana
|Issue Date:||2011||Citation:||Ivana,Subramanian, S.,Kong, E.Y.-J.,Zhou, Q.,Yeo, Y.-C. (2011). Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2011.6135218||Abstract:||Introduction. In xGa 1xAs is an attractive channel material to replace Si in future generations of n-MOSFETs due to its high electron mobility. Self-aligned contact metallization is needed to realize low parasitic series resistance. Recently, Ni-InGaAs self-aligned contact metallization was reported for InGaAs n-MOSFETs. 1, 2 In general, metal-InGaAs compounds could be used as self-aligned contact materials and possibly as source/drain (S/D) materials. In this work, we report the first demonstration of implant-less In 0.53Ga 0.47As n-MOSFETs with metallic S/D formed by self-aligned Co-InGaAs metallization technology. © 2011 IEEE.||Source Title:||2011 International Semiconductor Device Research Symposium, ISDRS 2011||URI:||http://scholarbank.nus.edu.sg/handle/10635/83556||ISBN:||9781457717550||DOI:||10.1109/ISDRS.2011.6135218|
|Appears in Collections:||Staff Publications|
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