Please use this identifier to cite or link to this item:
|Title:||CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs||Authors:||Ivana
|Issue Date:||Dec-2012||Citation:||Ivana, Kong, E.Y.-J., Subramanian, S., Zhou, Q., Pan, J., Yeo, Y.-C. (2012-12). CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs. Solid-State Electronics 78 : 62-67. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2012.05.030||Abstract:||CoInGaAs, a new self-aligned silicide-like source/drain (S/D) metallic contact, was demonstrated on In 0.53Ga 0.47As n-MOSFET. Co reacts with In 0.53Ga 0.47As at temperatures as low as 350 °C, forming metallic material comprising regions rich in cobalt gallium and cobalt arsenide. The CoInGaAs formed exhibits Schottky characteristic on p-type In 0.53Ga 0.47As, and is thus suitable for S/D material. It also exhibits ohmic behavior on n-type In 0.53Ga 0.47As (doping concentration of ∼5 × 10 19 cm -3) with contact resistance and specific contact resistivity of ∼1.12 kΩ μm and ∼6.25 × 10 -4 cm 2, respectively. The integration of CoInGaAs as metallic S/D material in In 0.53Ga 0.47As n-MOSFET produces reasonably well-behaved output characteristics. front matter © 2012 Elsevier Ltd. All rights reserved.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83555||ISSN:||00381101||DOI:||10.1016/j.sse.2012.05.030|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.