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|Title:||CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers||Authors:||Zhou, H.
|Issue Date:||2013||Citation:||Zhou, H.,Kropelnicki, P.,Tsai, J.M.,Lee, C. (2013). CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) : 429-432. ScholarBank@NUS Repository. https://doi.org/10.1109/MEMSYS.2013.6474270||Abstract:||An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×10 8 cmHz1/2 W-1. © 2013 IEEE.||Source Title:||Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)||URI:||http://scholarbank.nus.edu.sg/handle/10635/83552||ISBN:||9781467356558||ISSN:||10846999||DOI:||10.1109/MEMSYS.2013.6474270|
|Appears in Collections:||Staff Publications|
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