Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1426370
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dc.titleCharacterization of ultrashallow dopant profiles using spreading resistance profiling
dc.contributor.authorTan, L.S.
dc.contributor.authorTan, L.C.P.
dc.contributor.authorLeong, M.S.
dc.contributor.authorMazur, R.G.
dc.contributor.authorYe, C.W.
dc.date.accessioned2014-10-07T04:42:25Z
dc.date.available2014-10-07T04:42:25Z
dc.date.issued2002-01
dc.identifier.citationTan, L.S., Tan, L.C.P., Leong, M.S., Mazur, R.G., Ye, C.W. (2002-01). Characterization of ultrashallow dopant profiles using spreading resistance profiling. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1) : 483-487. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1426370
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83545
dc.description.abstractElectrically active dopant profiles and the position of metallurgical junctions of a shallow ion implanted p+ as well as n+ structures were recovered from spreading resistance profiling measurements using the inverse algorithm. The carrier redistribution effects due to steep dopant gradient and band-gap narrowing effect due to pressure of the spreading resistance probes were accounted in the algorithm. The results were verified by comparison with results from secondary ion mass spectrometry. Results indicated significant displacements between the locations of the metallurgical junctions and the peaks of the spreading resistance profiles.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1426370
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.1426370
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume20
dc.description.issue1
dc.description.page483-487
dc.description.codenJVTBD
dc.identifier.isiut000173985500090
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