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|Title:||Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test||Authors:||Lou, L.
large compressive strain
|Issue Date:||2012||Citation:||Lou, L.,Yan, H.,He, C.,Park, W.-T.,Kwong, D.-L.,Lee, C. (2012). Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2012.6306318||Abstract:||A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5% after 3.6x10 5 cycles, there is no observed drift and degradation in sensor characteristics. © 2012 IEEE.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/83544||ISBN:||9781467309806||DOI:||10.1109/IPFA.2012.6306318|
|Appears in Collections:||Staff Publications|
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