Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2012.6306318
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dc.titleCharacterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test
dc.contributor.authorLou, L.
dc.contributor.authorYan, H.
dc.contributor.authorHe, C.
dc.contributor.authorPark, W.-T.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorLee, C.
dc.date.accessioned2014-10-07T04:42:25Z
dc.date.available2014-10-07T04:42:25Z
dc.date.issued2012
dc.identifier.citationLou, L.,Yan, H.,He, C.,Park, W.-T.,Kwong, D.-L.,Lee, C. (2012). Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPFA.2012.6306318" target="_blank">https://doi.org/10.1109/IPFA.2012.6306318</a>
dc.identifier.isbn9781467309806
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83544
dc.description.abstractA novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5% after 3.6x10 5 cycles, there is no observed drift and degradation in sensor characteristics. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IPFA.2012.6306318
dc.sourceScopus
dc.subjectFatigue
dc.subjectlarge compressive strain
dc.subjectpiezoresistive
dc.subjectpressure sensor
dc.subjectsilicon nanowire
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IPFA.2012.6306318
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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