Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.082
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dc.titleCharacterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
dc.contributor.authorLiu, W.
dc.contributor.authorSoh, C.B.
dc.contributor.authorChen, P.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:42:21Z
dc.date.available2014-10-07T04:42:21Z
dc.date.issued2004-08-01
dc.identifier.citationLiu, W., Soh, C.B., Chen, P., Chua, S.J. (2004-08-01). Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 509-514. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.082
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83539
dc.description.abstractTwo sets of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition (MOCVD) were studied by atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL) spectroscopy. In all samples a large number of pits have been observed on the surface with the density of 1 × 109cm-2, and hexagonal opening. In one set with different thickness, it was also found that the XRD angle separation between GaN and AlInGaN diffraction peaks increased with the thickness. In PL measurements, a blue shift of the PL peak from AlInGaN was found as the thickness increased. The origin of these observations was proposed to be the Al composition pulling effect. In the other set with different Al/In ratios, domain features were observed on the surface of AlInGaN epilayers with high Al/In ratio. The surface roughness increased as Al/In ratio decreased. PL emission from AlInGaN became stronger as the Al/In ratio approached the lattice-match condition. When the Al/In ratio was below that of lattice-match condition, the emission peak was enhanced and broadened dramatically at the same time, indicating the effect of indium clustering in AlInGaN epilayers. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2004.04.082
dc.sourceScopus
dc.subjectA1. Atomic force microscopy
dc.subjectA1. Composition pulling effect
dc.subjectA1. Photoluminescence
dc.subjectA1. V-pits
dc.subjectA1. X-ray diffraction
dc.subjectA3. Metalorganic chemical vapor deposition
dc.subjectB1. AlInGaN quaternary
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jcrysgro.2004.04.082
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume268
dc.description.issue3-4 SPEC. ISS.
dc.description.page509-514
dc.description.codenJCRGA
dc.identifier.isiut000223087000033
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