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https://doi.org/10.1109/NEMS.2012.6196732
Title: | Characterization of a multi-layered MEMS pressure sensor using piezoresistive silicon nanowire within large measurable strain range | Authors: | Lou, L. Zhang, S. Park, W.-T. Lim, L. Kwong, D.-L. Lee, C. |
Keywords: | pressure sensor silicon nanowire |
Issue Date: | 2012 | Citation: | Lou, L.,Zhang, S.,Park, W.-T.,Lim, L.,Kwong, D.-L.,Lee, C. (2012). Characterization of a multi-layered MEMS pressure sensor using piezoresistive silicon nanowire within large measurable strain range. 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 : 99-103. ScholarBank@NUS Repository. https://doi.org/10.1109/NEMS.2012.6196732 | Abstract: | Multilayered pressure sensors using piezoresistive silicon nanowires (SiNWs) are characterized using center displacement loading approach. The silicon nanowire (SiNW) is embedded in a multilayered diaphragm structure comprising of silicon nitride and silicon oxide. By leveraging the high fracture stress and intrinsic tensile stress of silicon nitride layer to produce a flat diaphragm, we can create compressive strain to the SiNW as large as 1.7% without damaging the diaphragm. The equivalent pressure to break the diaphragm is derived as high as above 500 psi. The sensitivity at low pressure application region ( | Source Title: | 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 | URI: | http://scholarbank.nus.edu.sg/handle/10635/83538 | ISBN: | 9781467311243 | DOI: | 10.1109/NEMS.2012.6196732 |
Appears in Collections: | Staff Publications |
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