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|Title:||Characterization of a multi-layered MEMS pressure sensor using piezoresistive silicon nanowire within large measurable strain range||Authors:||Lou, L.
|Issue Date:||2012||Citation:||Lou, L.,Zhang, S.,Park, W.-T.,Lim, L.,Kwong, D.-L.,Lee, C. (2012). Characterization of a multi-layered MEMS pressure sensor using piezoresistive silicon nanowire within large measurable strain range. 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 : 99-103. ScholarBank@NUS Repository. https://doi.org/10.1109/NEMS.2012.6196732||Abstract:||Multilayered pressure sensors using piezoresistive silicon nanowires (SiNWs) are characterized using center displacement loading approach. The silicon nanowire (SiNW) is embedded in a multilayered diaphragm structure comprising of silicon nitride and silicon oxide. By leveraging the high fracture stress and intrinsic tensile stress of silicon nitride layer to produce a flat diaphragm, we can create compressive strain to the SiNW as large as 1.7% without damaging the diaphragm. The equivalent pressure to break the diaphragm is derived as high as above 500 psi. The sensitivity at low pressure application region (||Source Title:||2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012||URI:||http://scholarbank.nus.edu.sg/handle/10635/83538||ISBN:||9781467311243||DOI:||10.1109/NEMS.2012.6196732|
|Appears in Collections:||Staff Publications|
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