Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IEDM.2006.346776
DC Field | Value | |
---|---|---|
dc.title | Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric | |
dc.contributor.author | Shen, C. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Foo, C.E. | |
dc.contributor.author | Yang, T. | |
dc.contributor.author | Huang, D.M. | |
dc.contributor.author | Yaps, A. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:42:20Z | |
dc.date.available | 2014-10-07T04:42:20Z | |
dc.date.issued | 2006 | |
dc.identifier.citation | Shen, C.,Li, M.-F.,Foo, C.E.,Yang, T.,Huang, D.M.,Yaps, A.,Samudra, G.S.,Yeo, Y.-C. (2006). Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2006.346776" target="_blank">https://doi.org/10.1109/IEDM.2006.346776</a> | |
dc.identifier.isbn | 1424404398 | |
dc.identifier.issn | 01631918 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83537 | |
dc.description.abstract | Highly reliable characterization of fast transient in NBTI is achieved by performing initial and stressed I - V measurements in ultra-short time (100 ns). We further provide evidences that reaction-diffusion (R-D) model can not explain the fast transient in NBTI, while hole trapping (HT) model explains all experimental observations. We also establish that previous on-the-fly methods are sound except for the slow initial measurement. This caused the apparent disagreements among results from different groups using on-the-fly methods, which is resolved in this work by the fast on-the-fly technique. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2006.346776 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/IEDM.2006.346776 | |
dc.description.sourcetitle | Technical Digest - International Electron Devices Meeting, IEDM | |
dc.description.page | - | |
dc.description.coden | TDIMD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.