Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDER.2006.307645
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dc.titleCarrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions
dc.contributor.authorAng, K.-W.
dc.contributor.authorChin, H.-C.
dc.contributor.authorChui, K.-J.
dc.contributor.authorLi, M.-F.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:42:14Z
dc.date.available2014-10-07T04:42:14Z
dc.date.issued2007
dc.identifier.citationAng, K.-W.,Chin, H.-C.,Chui, K.-J.,Li, M.-F.,Samudra, G.,Yeo, Y.-C. (2007). Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions. ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference : 89-92. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ESSDER.2006.307645" target="_blank">https://doi.org/10.1109/ESSDER.2006.307645</a>
dc.identifier.isbn1424403014
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83528
dc.description.abstractThe physics of carrier transport in a sub-90nm strained SOI n-MOSFET with silicon-carbon (SiC) source/drain (S/D) regions is investigated for the first time. Significant improvement in carrier backscattering coefficient r sat and source injection velocity Vinj accounts for the large drive current IDsat enhancement in SiC S/D transistors. The improvement in rsat is attributed to the modulation of conduction band barrier which results in a shorter critical length for carrier backscattering. On the other hand, strain-induced conduction band valley splitting leads to a reduced electron effective mass and thus contributes to the Vinj enhancement. In addition, we evaluate the dependence of drive current performance on carrier injection velocity and ballistic efficiency in a short channel MOSFET. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ESSDER.2006.307645
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ESSDER.2006.307645
dc.description.sourcetitleESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
dc.description.page89-92
dc.identifier.isiutNOT_IN_WOS
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