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|Title:||Bonding interface materials evolution of intermediate In/Ag layers for low temperature fluxless solder based MEMS wafer level packaging||Authors:||Lee, C.
|Issue Date:||2008||Citation:||Lee, C., Yu, D., Yu, A., Yan, L., Wang, H., Lau, J.H. (2008). Bonding interface materials evolution of intermediate In/Ag layers for low temperature fluxless solder based MEMS wafer level packaging. 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008 : 216-219. ScholarBank@NUS Repository. https://doi.org/10.1109/EMAP.2008.4784267||Abstract:||In this paper, we proposed new intermediate bonding layers (IBLs) of Ag-rich composition in In-Ag solder systems in contrast to previous studies mainly based on eutectic composition. The intermetallic compounds (lMCs) at the bonding interface were investigated with respect to the bonding condition, post-bonding room temperature storage and post-bonding heat treatment. The IMCs of Ag21n and Ag2114 with high temperature resist to postbonding process are derived under process condition of wafer bonding at 180°C, 40mins and subsequent 120°C-130°C annealing for 24 hours. Based on our results, we can design proper packaging process flow so as to get reliable wafer level packaged MEMS devices. © 2008 IEEE.||Source Title:||2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008||URI:||http://scholarbank.nus.edu.sg/handle/10635/83520||ISBN:||9781424436217||DOI:||10.1109/EMAP.2008.4784267|
|Appears in Collections:||Staff Publications|
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