Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1689432
DC FieldValue
dc.titleBinding state and microstructure analyses of Co-doped TiO 2 thin film
dc.contributor.authorYao, X.F.
dc.contributor.authorZhou, T.J.
dc.contributor.authorGai, Y.X.
dc.contributor.authorChong, T.C.
dc.contributor.authorWang, J.P.
dc.date.accessioned2014-10-07T04:42:04Z
dc.date.available2014-10-07T04:42:04Z
dc.date.issued2004-06-01
dc.identifier.citationYao, X.F., Zhou, T.J., Gai, Y.X., Chong, T.C., Wang, J.P. (2004-06-01). Binding state and microstructure analyses of Co-doped TiO 2 thin film. Journal of Applied Physics 95 (11 II) : 7375-7377. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1689432
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83513
dc.description.abstractThe binding state, microstructure and diffusion behavior of multilayered Co-doped TiO 2 thin film were investigated, using x-ray photoelectron spectroscopy and transmission electron microscopy (TEM). The magnetron sputtering method was used for the deposition of thin films on a LaAlO 3 (001) single crystal substrate, at room temperature. Postannealing treatment in an ultrahigh vacuum system was used for the diffusion of Co atoms into TiO 2. The results from TEM patterns show that the annealed films exhibit a polycrystalline rutile-TiO 2 phase.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1689432
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1689432
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume95
dc.description.issue11 II
dc.description.page7375-7377
dc.description.codenJAPIA
dc.identifier.isiut000221657900285
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