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|Title:||Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors||Authors:||Liu, B.
|Issue Date:||2011||Citation:||Liu, B.,Yang, M.,Zhan, C.,Yang, Y.,Yeo, Y.-C. (2011). Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 22-23. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872215||Abstract:||We report a bias temperature instability (BTI) study of graphene Field-Effect Transistor (G-FET) for the first time. New BTI characteristics are observed for G-FETs fabricated using a graphene transfer-free process. Temperature significantly affects BTI of G-FETs by changing the direction of shift of IDS. A plausible graphene BTI mechanism is discussed. © 2011 IEEE.||Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83512||ISBN:||9781424484928||DOI:||10.1109/VTSA.2011.5872215|
|Appears in Collections:||Staff Publications|
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