Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2011.5872215
Title: Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
Authors: Liu, B.
Yang, M.
Zhan, C.
Yang, Y.
Yeo, Y.-C. 
Issue Date: 2011
Citation: Liu, B.,Yang, M.,Zhan, C.,Yang, Y.,Yeo, Y.-C. (2011). Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 22-23. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872215
Abstract: We report a bias temperature instability (BTI) study of graphene Field-Effect Transistor (G-FET) for the first time. New BTI characteristics are observed for G-FETs fabricated using a graphene transfer-free process. Temperature significantly affects BTI of G-FETs by changing the direction of shift of IDS. A plausible graphene BTI mechanism is discussed. © 2011 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83512
ISBN: 9781424484928
DOI: 10.1109/VTSA.2011.5872215
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