Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2007.4339719
DC FieldValue
dc.titleBeneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
dc.contributor.authorAng, K.-W.
dc.contributor.authorLin, J.
dc.contributor.authorTung, C.-H.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:42:03Z
dc.date.available2014-10-07T04:42:03Z
dc.date.issued2007
dc.identifier.citationAng, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G., Yeo, Y.-C. (2007). Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs. Digest of Technical Papers - Symposium on VLSI Technology : 42-43. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2007.4339719
dc.identifier.issn07431562
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83511
dc.description.abstractWe report the first demonstration of a novel transistor structure featuring a beneath-the-channel strain-transfer-structure (STS) and embedded source/drain (S/D) stressors for strain and performance enhancement. As compared to a transistor with standard S/D stressors, additional strain is imparted to the channel region by the STS due to coupling of its lattice interactions with the adjacent S/D stressors and the overlying channel region. Both strained n-FET with SiGe STS and silicon-carbon (SiC) S/D, and strained p-FET with SiC STS and SiGe S/D, were realized. The Ion performance of strained n- and p-FETs with STS and S/D stressors were enhanced by 42% and 60%, respectively, over unstrained control transistors for given. DIBL of 0.15 V/V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VLSIT.2007.4339719
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VLSIT.2007.4339719
dc.description.sourcetitleDigest of Technical Papers - Symposium on VLSI Technology
dc.description.page42-43
dc.description.codenDTPTE
dc.identifier.isiut000250539900015
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