Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ESSDERC.2007.4430916
DC Field | Value | |
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dc.title | Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers | |
dc.contributor.author | Lim, A.E.-J. | |
dc.contributor.author | Lee, R.T.P. | |
dc.contributor.author | Wang, X.P. | |
dc.contributor.author | Hwang, W.S. | |
dc.contributor.author | Tung, C.-H. | |
dc.contributor.author | Lai, D.M.Y. | |
dc.contributor.author | Samudra, G. | |
dc.contributor.author | Kwong, D.-L. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:42:01Z | |
dc.date.available | 2014-10-07T04:42:01Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.-H., Lai, D.M.Y., Samudra, G., Kwong, D.-L., Yeo, Y.-C. (2008). Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 210-213. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430916 | |
dc.identifier.isbn | 1424411238 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83508 | |
dc.description.abstract | Nickel fully-silicided (FUSI) gate work function Φm was successfully tuned for the first time by the insertion of novel Yttrium- (Y) based, Terbium- (Tb) based, or Ytterbium- (Yb) based interlayer at the gate/dielectric interface. Band edge NiFUSI gate Φm (4.01 - 4.11 eV) were obtained in a gate-first process flow (950 or 1000°C anneal) by an inserted ultra-thin (∼1 nm) interlayer on SiO2 dielectric. We further demonstrate that gate-first implementation of the interlayers in a XiSi/HfO2 gate stack can realize a low Φm of ∼4.28 eV without dopant incorporation or Ni-alloying. In addition, NiSi Φm modulation between Si midgap and band edge could be achieved by varying the interlayer thickness or Ni-silicide phase. © 2007 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ESSDERC.2007.4430916 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/ESSDERC.2007.4430916 | |
dc.description.sourcetitle | ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference | |
dc.description.page | 210-213 | |
dc.identifier.isiut | 000252831900044 | |
Appears in Collections: | Staff Publications |
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