Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDERC.2007.4430916
DC FieldValue
dc.titleBand edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorWang, X.P.
dc.contributor.authorHwang, W.S.
dc.contributor.authorTung, C.-H.
dc.contributor.authorLai, D.M.Y.
dc.contributor.authorSamudra, G.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:42:01Z
dc.date.available2014-10-07T04:42:01Z
dc.date.issued2008
dc.identifier.citationLim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.-H., Lai, D.M.Y., Samudra, G., Kwong, D.-L., Yeo, Y.-C. (2008). Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 210-213. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430916
dc.identifier.isbn1424411238
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83508
dc.description.abstractNickel fully-silicided (FUSI) gate work function Φm was successfully tuned for the first time by the insertion of novel Yttrium- (Y) based, Terbium- (Tb) based, or Ytterbium- (Yb) based interlayer at the gate/dielectric interface. Band edge NiFUSI gate Φm (4.01 - 4.11 eV) were obtained in a gate-first process flow (950 or 1000°C anneal) by an inserted ultra-thin (∼1 nm) interlayer on SiO2 dielectric. We further demonstrate that gate-first implementation of the interlayers in a XiSi/HfO2 gate stack can realize a low Φm of ∼4.28 eV without dopant incorporation or Ni-alloying. In addition, NiSi Φm modulation between Si midgap and band edge could be achieved by varying the interlayer thickness or Ni-silicide phase. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ESSDERC.2007.4430916
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ESSDERC.2007.4430916
dc.description.sourcetitleESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
dc.description.page210-213
dc.identifier.isiut000252831900044
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Page view(s)

69
checked on Sep 20, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.