Please use this identifier to cite or link to this item: https://doi.org/10.7567/JJAP.52.04CF06
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dc.titleAlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process
dc.contributor.authorLiu, X.
dc.contributor.authorZhan, C.
dc.contributor.authorWai Chan, K.
dc.contributor.authorSamuel Owen, M.H.
dc.contributor.authorLiu, W.
dc.contributor.authorChi, D.Z.
dc.contributor.authorTan, L.S.
dc.contributor.authorChen, K.J.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:41:21Z
dc.date.available2014-10-07T04:41:21Z
dc.date.issued2013-04
dc.identifier.citationLiu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C. (2013-04). AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process. Japanese Journal of Applied Physics 52 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.52.04CF06
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83449
dc.description.abstractThis paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing L GDof 20 μm achieved an off-state breakdown voltage V BRof 1400 V and an on-state resistance Ron of 22mω cm 2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of ∼109 and low gate leakage current IG of ∼10-11 A/mm were also obtained. © 2013 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.7567/JJAP.52.04CF06
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.7567/JJAP.52.04CF06
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume52
dc.description.issue4 PART 2
dc.description.page-
dc.identifier.isiut000320002400083
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