Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83436
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dc.titleActive transversal S-band filter using lumped elements in standard 0.13 μm CMOS
dc.contributor.authorDalpatadu, R.
dc.contributor.authorMouthaan, K.
dc.date.accessioned2014-10-07T04:41:13Z
dc.date.available2014-10-07T04:41:13Z
dc.date.issued2012
dc.identifier.citationDalpatadu, R.,Mouthaan, K. (2012). Active transversal S-band filter using lumped elements in standard 0.13 μm CMOS. 2012 the 7th German Microwave Conference, GeMiC 2012 : -. ScholarBank@NUS Repository.
dc.identifier.isbn9783981266849
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83436
dc.description.abstractAn active S-band filter with high out-of-band rejection and good gain in a standard 0.13 m CMOS process is fabricated. The filter topology is based on the transversal filter concept using lumped elements. The measured passband is from 2.3 - 3.8 GHz with an insertion gain of 6 dB and a rejection better than 35 dB at 1.5 GHz and 5.0 GHz. Input and output return losses are better than 10 and 15 dB respectively. The fabricated filter has a total chip area of 1×2 mm 2. © 2012 Institut f r Mikrowellen.
dc.sourceScopus
dc.subjectactive inductors
dc.subjectCMOS active filters
dc.subjectlumped and transversal filtering
dc.subjectquality factors
dc.subjectRF active filters
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitle2012 the 7th German Microwave Conference, GeMiC 2012
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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